The 4th Global Conference on Materials Science and Engineering
August 3-6, 2015 Macau, China
| Solution processed zinc-tin oxide thin-film transistor for charge-trapping memory application | |
| Prof. Jen-Sue Chen | |
| Department of Materials Science and Engineering National Cheng Kung University, Taiwan, China |
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We developed a solution processed zinc-tin oxide (ZTO) film of only ~7 nm in thickness and the ZTO is applied as the active semiconductor layer in a thin film transistor (TFT) with SiO2 dielectrics, which exhibits a good field-effect mobility of ~10 cm2/Vs, small subthreshold slope of ~0.5 V/decade and high on/off current ratio of ~107. After introducing a Ni charge trapping layer and an AlOx tunneling layer in the gate dielectrics, the ZTO TFT ID-VG transfer characteristics can be horizontally shifted by +3V/-3V when applying positive/negative gate biases. The shift of ID-VG transfer characteristics can be further modulated by visible light illumination. The charge transport between ZTO TFT channel region and Ni trapping layer will be discussed based on the electron tunneling and migration of photo-ionized oxygen vacancies, under the influence of gate bias and visible light illumination. |
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