Senior Principal Researcher & Deputy Director General, Advanced Science Research Center, Japan Atomic Energy Agency, Japan.

Speech Title: Real-time stress measurement during silicon surface reconstruction
Abstract:Nano-structure influences strongly the surface stress. Silicon reconstructing surface has unique nano-structure based on dangling bond reduction and adatom formation. The complex arrangements of the surface atoms, such as adatoms, dimers, and stacking faults are formed on Si(111) 7×7 surface, and pairs of pentagons are formed on Si(110) 16×2 surface. Despite importance of the surface stress for nano-structure formation, experimental knowledge on the impacts of reconstruction on the Si surface has been quite limited. We focused on real-time stress measurement during hydrogen desorption and adsorption process on the reconstructing surfaces. In order to obtain information on both the surface stress and the surface structure simultaneously, we combined the surface-curvature and the reflection high-energy electron-diffraction instrumentations in an identical ultrahigh vacuum system.